GeTe crystallizes with a strong deviation from the stoichiometric composition (in the direction of Te excess), which results in a growth of free carrier concentration (holes) up to p ~ 10²¹ cm⁻³. Such concentration is too high from the viewpoint of thermoelectric applications (maximum value of the figure of merit Z). The work demonstrates the possibility of increasing the thermoelectric efficiency of the GeTe-based material, used for the p-type leg of the thermoelectric couple over the temperature range of 600–825 K. The samples were prepared using Spark Plasma Sintering (SPS) technique. A systematic analysis of thermoelectric properties for Ge_1-xPb_xTe alloys (x up to 5 at.%) has been performed. An increase in the lead content in Ge_1-xPb_xTe alloys creates two parallel processes. The first process is a decrease of the lattice thermal conductivity κ_lat, which acts up to T ≈ 550 K, when the lead content in Ge_1-xPb_xTe alloys increases up to 5 at. %. However, the main process is to reduce deviation from the stoichiometric composition, which consequently leads to lower hole concentration p. Therefore, at a high temperature of T ≥ 550 K Fermi level E_F is approaching the edge of the valence band E_v. As a result, the thermoelectric dimensionless figure of merit ZT increases up to 1.1 at the temperature of 825 K.

的GeTe结晶从化学计量组成的强偏差（在TE中过量的方向），其结果在自由载流子浓度的生长（空穴）向上p〜10 ²¹厘米^-3。从热电应用的观点来看，这样的浓度太高（品质因数Z的最大值）。这项工作证明了在600–825 K的温度范围内，用于热电偶的p型管脚的GeTe基材料的热电效率的提高的可能性。样品是使用火花等离子体烧结（SPS）技术制备的。Ge _1-x Pb _x热电性质的系统分析进行了Te合金（x含量最高为5 at。％）。Ge _1-x Pb _x Te合金中铅含量的增加产生了两个平行的过程。第一过程是晶格热导率的降低κ _LAT，其作用达到Ť  ≈550 K，当在锗中的铅含量_1-x铅_X碲合金上升至5原子 ％。然而，主要过程是减小与化学计量组成的偏差，因此导致较低的空穴浓度p。因此，在高温下的Ť  ≥550千费米能级Ë _˚F正在接近价带的边缘Ë _v。结果，在825 K的温度下，热电的无因次系数ZT增加到1.1。