Abstract

The dielectric properties and ac conductivity of an electronically irradiated layered TlGaS₂ single crystal are studied in the frequency range of 5 × 10⁴–3.5 × 10⁷ Hz. It is established that electron irradiation of TlGaS₂ single crystal samples with doses of 2 × 10^l2 to 2.4 × 10¹³ e/cm² leads to a decrease in the real component (ε') of the complex dielectric permittivity in a high-frequency region (f > 10⁶ Hz) and an increase in its imaginary component (ε''), the dielectric loss tangent (tanδ), and ac conductance (σ_ac) across the layers in the entire studied frequency range. At irradiation doses of 2 × 10^l2 to 2.4 × 10¹³ e/cm², losses in the reach-through conductivity of TlGaS₂ occur, and, as the electron irradiation dose accumulates, the dispersion of ε'' and tanδ increases significantly. In the frequency range of f = 5 × 10⁴–2 × 10⁷ Hz, in the irradiated TlGaS₂ samples, the ac conductivity changes according to the law σ_ac ~ fⁿ (where n = 0.7–0.8), which is typical of the hopping mechanism of charge transfer via localized states near the Fermi level. The parameters of localized states in TlGaS₂ (the density of the states near the Fermi level and their energy spread) are estimated versus the electron irradiation dose.

中文翻译：

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通过电子辐照改变TlGaS 2单晶的介电性能

摘要

在5×10 ⁴ –3.5×10 ⁷ Hz的频率范围内研究了电子辐照的层状TlGaS ₂单晶的介电性能和交流电导率。已确定剂量为2×10 ^l2至2.4×10 ¹³ e / cm ²的TlGaS ₂单晶样品的电子辐照会导致高频下复介电常数的实数分量（ε'）降低区域（˚F > 10 ⁶赫兹），并增加了它的虚分量（ε'），介电损耗角正切（tanδ），和交流电导（σ_交流）在整个研究的频率范围内跨层。在2×10 ^l2到2.4×10 ¹³ e / cm ^2的辐照剂量下，TlGaS ₂的穿透导电率会发生损失，并且随着电子辐照剂量的累积，ε''和tanδ的色散会显着增加。在的频率范围˚F = 5×10 ⁴ -2×10 ⁷赫兹，在照射TlGaS _2个样品中，交流电导率改变依法σ_交流〜˚F ^Ñ（其中Ñ= 0.7–0.8），这是通过费米能级附近的局部状态进行电荷转移的跳跃机制的典型特征。相对于电子辐照剂量，估计了TlGaS ₂中局部态的参数（费米能级附近的态密度及其能量分布）。