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Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS 2 /MoS 2 with enhanced performance of transistors and photodetectors
Science China Materials ( IF 8.1 ) Pub Date : 2020-06-24 , DOI: 10.1007/s40843-020-1355-2
Peng Zhang , Ce Bian , Jiafu Ye , Ningyan Cheng , Xingguo Wang , Huaning Jiang , Yi Wei , Yiwei Zhang , Yi Du , Lihong Bao , Weida Hu , Yongji Gong

Two-dimensional (2D) heterostructures based on layered transition metal dichalcogenides (TMDs) have attracted increasing attention for the applications of the next-generation high-performance integrated electronics and optoelectronics. Although various TMD heterostructures have been successfully fabricated, epitaxial growth of such atomically thin metal-semiconductor heterostructures with a clean and sharp interface is still challenging. In addition, photodetectors based on such heterostructures have seldom been studied. Here, we report the synthesis of high-quality vertical NbS2/MoS2 metallic-semiconductor heterostructures. By using NbS2 as the contact electrodes, the field-effect mobility and current on-off ratio of MoS2 can be improved at least 6-fold and two orders of magnitude compared with the conventional Ti/Au contact, respectively. By using NbS2 as contact, the photodetector performance of MoS2 is much improved with higher responsivity and less response time. Such facile synthesis of atomically thin metal-semiconductor heterostructures by a simple chemical vapor deposition strategy and its effectiveness as ultrathin 2D metal contact open the door for the future application of electronics and optoelectronics.



中文翻译:

金属半导体范德华异质结构NbS 2 / MoS 2的外延生长,具有增强的晶体管和光电探测器性能

基于层状过渡金属二金属卤化物(TMD)的二维(2D)异质结构在下一代高性能集成电子器件和光电器件的应用中引起了越来越多的关注。尽管已经成功地制造了各种TMD异质结构,但是这种具有清洁和尖锐界面的原子薄金属-半导体异质结构的外延生长仍然具有挑战性。另外,很少研究基于这种异质结构的光电探测器。在这里,我们报告了高质量的垂直NbS 2 / MoS 2金属-半导体异质结构的合成。通过使用NbS 2作为接触电极,MoS 2的场效应迁移率和电流通断比与常规的Ti / Au接触相比,可以分别提高至少6倍和两个数量级。通过使用NbS 2作为接触,MoS 2的光电检测器性能大大提高,响应速度更快,响应时间更短。通过简单的化学气相沉积策略,这种原子薄的金属-半导体异质结构的简便合成及其作为超薄2D金属触点的有效性为电子和光电子的未来应用打开了大门。

更新日期:2020-07-23
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