Functional van der Waals (vdWs) heterostructures based on layered materials have shown tremendous potential in next-generation optoelectronic devices. To date, numerous vdWs heterostructures have been investigated based on stacking or epitaxial growth technology. However, the complicated synthesis process greatly limits the large-scale integration of the heterostructure device array, which is essential for practical applications. Here, a planar photodetector array with an out-of-plane vertical In₂Se₃/SnSe₂ heterostructure as the photosensitive channel was self-assembled through a pulsed laser deposition (PLD) technique. The vertical built-in field was exploited to suppress the dark current and separate the photogenerated carriers. The realized devices possess an ultralow dark current of 6.3 pA, combined with a high detectivity of 8.8×10¹¹ Jones and a high signal-to-noise ratio (SNR) beyond 3×10⁴. These performance metrics not only are one order of magnitude superior to pure In₂Se₃ device, but also demonstrate the unique advantage of detecting weak signals. In addition, this heterostructure photodetector array can further be constructed on flexible polyimide (PI) substrate. These flexible devices also demonstrate effective light detection capability and the photoresponse remains unchanged even after 200 cycles of bending. These findings pave a way toward the development of next-generation large area and high integration optoelectronic technologies.

基于分层材料的功能范德华（vdWs）异质结构在下一代光电器件中显示出巨大潜力。迄今为止，已经基于堆叠或外延生长技术研究了许多vdWs异质结构。然而，复杂的合成过程极大地限制了异质结构器件阵列的大规模集成，这对于实际应用至关重要。此处，具有平面外垂直In ₂ Se ₃ / SnSe ₂的平面光电探测器阵列异质结构作为光敏通道通过脉冲激光沉积（PLD）技术自组装。利用垂直内置场来抑制暗电流并分离光生载流子。所实现的器件具有6.3 pA的超低暗电流，并具有8.8×10 ¹¹ Jones的高检测率和超过3×10 ⁴的高信噪比（SNR）。这些性能指标不仅比纯In ₂ Se ₃高一个数量级设备，但也展示了检测微弱信号的独特优势。另外，该异质结构光电探测器阵列可以进一步构造在柔性聚酰亚胺（PI）衬底上。这些柔性设备还显示出有效的光检测能力，即使弯曲200次后，光响应也保持不变。这些发现为下一代大面积和高集成度光电技术的发展铺平了道路。