In this work, we demonstrate a passively-Q-switched 1.33 μm Nd:Lu₂YSc_1.5Ga_3.5O₁₂ (Nd:LuYSGG) laser based on the Bi₂Se₃ topological insulator (TI) as a saturable absorber (SA). We obtain pulse widths as low as 146 ns at a pulse repetition rate of 349.5 kHz and a pulse energy of 1.03 μJ, which provides a peak power of 7.05 W. These results represent some of best yet published in terms of repetition rate, pulse width, and peak power for TI-based Q-switched 1.3 μm lasers, which indicates that TIs are suitable as SAs in the 1.3 μm region.

中文翻译：

---

通过Bi 2 Se 3拓扑绝缘体作为饱和吸收剂的无源Q开关1.33μmNd：Luysgg激光器

在这项工作中，我们展示了passively- Q -switched 1.33 μ中号的Nd：鲁₂ YSC _{1 。5} Ga _{3 。}基于Bi ₂ Se ₃拓扑绝缘体（TI）作为可饱和吸收体（SA）的₅ O ₁₂（Nd：LuYSGG）激光器。我们获得的脉冲宽度低至在349.5 kHz的脉冲重复率和1.03的脉冲能量146纳秒μ J--其提供7.05 W的峰值功率这些结果代表了一些最好还发表在重复频率而言，脉冲宽度，和峰值功率基于TI- Q -switched 1.3 μ米激光器，这表明TI的适合作为安全联盟中的1.3 μ米区域。