We report epitaxial growth and properties of n-type ferromagnetic semiconductor (FMS) (In,Fe)As (Fe 6%) co-doped with Mn at different concentrations x ( x = 0.4%, 0.8%, 2%, 4%, 8%). The electron concentration n of (In 0.94− x ,Fe 0.06 ,Mn x )As decreases as x increases, leading to the decrease of Curie temperature ( T C ) as expected for electron-induced ferromagnetism. However, ferromagnetism is still observed at n as low as ∼ 3.8 × 10 17 cm −3 , which is one order of magnitude lower than the typical threshold value of (In,Fe)As ( n th ∼ 6 × 10 18 cm −3 ). This result highlights the possibility of enhancing the ferromagnetism by co-doping different magnetic elements in FMSs.

中文翻译：

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共掺杂铁磁半导体（In，Fe，Mn）As的输运和磁性

我们报告了在不同浓度x下x（x = 0.4％，0.8％，2％，4％，7％的Mn共掺杂的n型铁磁半导体（FMS）（In，Fe）As（Fe 6％）的外延生长和性能8％）。（In 0.94-x，Fe 0.06，Mn x）As的电子浓度n随着x的增加而降低，从而导致居里温度（TC）降低，这是电子感应铁磁性所预期的。但是，在n低至约3.8×10 17 cm -3时仍观察到铁磁性，这比（In，Fe）As的典型阈值低（n th〜6×10 18 cm -3）一个数量级。 ）。该结果突出了通过在FMS中共掺杂不同的磁性元素来增强铁磁性的可能性。