Abstract A GaN-based vertical cavity surface emitting laser (VCSEL) featuring a buried ring-shape p-Al0.10Ga0.90N inside n-GaN contact layer for lateral electron confinement is proposed. The p-AlGaN layer inserted in n-GaN forms an n-p-n structure, acting as a potential barrier to prevent vertical electron migration outside the aperture of the VCSEL, where optical gain is accumulated. By adjusting the thickness and position of the p-AlGaN layer, electron concentration and stimulated recombination rate in the aperture of the VCSEL increased significantly. Consequently, the output power of VCSEL with buried p-AlGaN layer increases by 57% compared to the conventional VCSEL at an injection current of 10 mA. The detailed mechanism responsible for this enhancement is further explored. This work suggests that the introduction of the buried p-AlGaN layer in VCSEL can provide new line of thought in achieving effective current confinement in the development of high-efficient, low-threshold solid-state lasers.

中文翻译：

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具有掩埋 p-AlGaN 反型层的 GaN 基垂直腔面发射激光器中载流子限制和受激复合率的改进

摘要 本文提出了一种基于 GaN 的垂直腔面发射激光器 (VCSEL)，该激光器在 n-GaN 接触层内具有埋入的环形 p-Al0.10Ga0.90N，用于横向电子限制。插入 n-GaN 中的 p-AlGaN 层形成 npn 结构，作为势垒防止电子垂直迁移到 VCSEL 孔径外，在那里积累光学增益。通过调整 p-AlGaN 层的厚度和位置，VCSEL 孔径中的电子浓度和受激复合率显着增加。因此，在注入电流为 10 mA 时，具有掩埋 p-AlGaN 层的 VCSEL 的输出功率比传统 VCSEL 增加了 57%。进一步探索了负责这种增强的详细机制。