The in-plane polarization ratio of anisotropically strained c-plane CdZnO/ZnO quantum well (QW) structures was investigated as a function of Cd content. The $y$-polarized peak intensity is rapidly enhanced with increasing strain relaxation along $y$-direction while the $x$-polarized peak intensity is slightly reduced. This is mainly owing to the increase in the $y$-polarized optical matrix element by a change of the light-hole (LH) envelope wavefunction magnitude. The increasing rate of the $y$-polarized emission peak by the strain relaxation is shown to be dominant for the QW structure with a relatively high Cd content. As a result, the magnitude of the in-plane polarization ratio rapidly increases with increasing Cd content.

研究了各向异性应变c面CdZnO / ZnO量子阱（QW）结构的面内极化比与Cd含量的关系。的$ÿ$随着应变松弛的增加，极化峰强度迅速增强 $ÿ$方向而 $X$-极化峰强度稍微降低。这主要是由于$ÿ$通过改变光孔（LH）包络波函数幅度来改变偏振光学矩阵元件。的增长率$ÿ$Cd含量较高的QW结构显示出应变弛豫引起的偏光发射峰占主导地位。结果，随着Cd含量的增加，面内极化比的大小迅速增加。