Abstract We investigate the effect of TID electron irradiation on a 65 GHz LNA in 130 nm SiGe BiCMOS. The LNA is exposed to a Sr-90 radiation source and irradiated at a rate of 200 krad (Si)/hr to a total dose of 15 Mrad (Si), with S-parameter and NF measurements taken at regular intervals. It is found that TID produces and increase in the input impedance, especially in the reactive component. The damage results in 2.3 dB reduction in midband gain, 2.97 dB increase in midband NF and up to 8.19 dB increase in midband S11, although the device remains matched across the band of interest. The degradation is found most pronounced at the band-edges, yielding a 1 dB gain flatness bandwidth reduction of 32%.

中文翻译：

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TID 电子辐射对 V 波段 SiGe BiCMOS LNA 的影响

摘要 我们研究了 TID 电子辐射对 130 nm SiGe BiCMOS 中 65 GHz LNA 的影响。LNA 暴露于 Sr-90 辐射源，并以 200 krad (Si)/hr 的速率照射至 15 Mrad (Si) 的总剂量，并定期进行 S 参数和 NF 测量。发现 TID 会产生并增加输入阻抗，尤其是在无功分量中。损坏导致中频增益降低 2.3 dB，中频 NF 增加 2.97 dB，中频 S11 增加高达 8.19 dB，尽管该设备在感兴趣的频段上保持匹配。发现衰减在频带边缘最为明显，导致 1 dB 增益平坦度带宽减少 32%。