The effects of internal electric field on the spectral characteristics of In_xGa_1−xN/GaN superluminescent light-emitting diodes are studied theoretically. The Schrödinger and Poisson equations and the rate and optical propagating equations are solved in the presence of the internal electric field. By increasing the indium mole fraction in the quantum well, the internal electric field increases linearly. The injection current affects the intensity, bandwidth and wavelength of the spectrum. The results show that the internal electric field shifts the spectral radiations to the red region. Also, in the presence of internal electric field, the peak intensity of spectra increases, and the optical gain reduces.

中文翻译：

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内部电场对基于GaN的蓝色超发光二极管的光谱特性的影响

理论上研究了内部电场对In _x Ga _{1- x} N / GaN超发光发光二极管光谱特性的影响。在存在内部电场的情况下求解Schrödinger和Poisson方程以及速率和光学传播方程。通过增加量子阱中的铟摩尔分数，内部电场线性增加。注入电流会影响光谱的强度，带宽和波长。结果表明，内部电场将光谱辐射移至红色区域。而且，在内部电场的存在下，光谱的峰值强度增加，并且光学增益降低。