In this paper an IGZO memristor with multiple states and analog tuning extended capability is reported. The device has a planar structure and is fabricated by magnetron sputtering on glass substrate. The device resistance could be gradually increased and decreased within the range of one order of magnitude. Larger resistance changes are also possible but they are mostly irreversible. The obtained memristor looks promising to be used as electronic synapse in hardware implemented artificial neural networks or for applications in analog computing and cryptography.

中文翻译：

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具有扩展功能的模拟 IGZO 忆阻器

在本文中，报告了一种具有多种状态和模拟调谐扩展能力的 IGZO 忆阻器。该器件具有平面结构，通过磁控溅射在玻璃基板上制造。器件电阻可以在一个数量级的范围内逐渐增大和减小。更大的电阻变化也是可能的，但它们大多是不可逆的。获得的忆阻器有望用作硬件实现的人工神经网络中的电子突触或用于模拟计算和密码学。