Herein, dielectric/semiconductor interfacial p‐doping is used to develop a high‐carrier‐mobility and balanced ambipolar tin oxide (SnO₂) thin‐film transistor (TFT). To introduce this interfacial doping, TFTs are fabricated by using two different ion‐conducting oxide dielectrics containing trivalent atoms. These ion‐conducting dielectrics are LiInO₂ and LiGaO₂ containing a mobile Li⁺ ion that reduces the operating voltage of these TFTs to ≤2.0 V. During SnO₂ thin film deposition, the interfacial SnO₂ layer is p‐doped by an In or Ga atom of the gate dielectric and therefore, hole conduction is facilitated in the channel of the TFT. To realize this interfacial doping phenomenon, a reference TFT is fabricated with a Li₂ZnO₂ dielectric that contains a divalent zinc atom. Comparative electrical data indicate that TFTs with LiInO₂ and LiGaO₂ dielectrics are ambipolar in nature, whereas the TFT with a Li₂ZnO₂ dielectric is a unipolar n‐channel transistor, corroborating the interfacial doping of SnO₂. Most interestingly, using a LiInO₂ dielectric, a 1.0 V balanced ambipolar TFT with high electron and hole mobility values of 7 and 8 cm² V⁻¹ s⁻¹, respectively, can be fabricated, with an on/off ratio > 10² for both operations. The TFT with a LiInO₂ dielectric is utilized successfully to fabricate a low‐voltage complementary metal–oxide–semiconductor (CMOS) inverter.

中文翻译：

---

介电/半导体界面p掺杂：制造溶液处理的高性能1 V双极性氧化晶体管的新技术

本文中，电介质/半导体界面p掺杂用于开发高载流子迁移率和平衡的双极性氧化锡（SnO ₂）薄膜晶体管（TFT）。为了引入这种界面掺杂，通过使用两种包含三价原子的不同离子导电氧化物电介质来制造TFT。这些离子传导性电介质为LiInO ₂和LiGaO _2，其中含有可移动的Li ⁺离子，可将这些TFT的工作电压降至≤2.0V。在SnO ₂薄膜沉积过程中，界面SnO ₂栅极电介质的In或Ga原子p掺杂了Pb层，因此，在TFT的沟道中促进了空穴传导。为了实现这种界面掺杂现象，利用包含二价锌原子的Li ₂ ZnO ₂电介质来制造参考TFT 。比较电数据表明，具有LiInO ₂和LiGaO ₂介电质的TFT本质上是双极性的，而具有Li ₂ ZnO ₂介电质的TFT是单极n沟道晶体管，这证实了SnO ₂的界面掺杂。最有趣的是，使用LiInO ₂电介质，1.0 V平衡双极性TFT，其电子和空穴迁移率值分别为7和8 cm可以分别制造²  V ^-1  s ^-1，两种操作的开/关比> 10 ²。具有LiInO ₂电介质的TFT已成功用于制造低压互补金属氧化物半导体（CMOS）逆变器。