Schottky Barrier Height, SBH, controls the current flow into electronic and photoelectronic devices based on hetero-junctions. The SBH predicted via the conventional method is sensitive to temperature by forward current-voltage-temperature, I-V-T. This poses some problems in applications of a hetero-junction device. Therefore, one looks for a technique to extract intrinsic SBH of each new hetero-junction. This paper established a simple model for determination of the forward I-V-T characteristics, a real thermionic current, I tc, and SBH. This model was introduced by considering quantum statistics and phenomenological. The proposed methodology can couple two independent plots of each hetero-junction current and helps predict the value of current at any measurement condition. The proposed model was successfully validated via over twenty experimental I–V curves. Therefore, applying the least-squares nonlinear fitting to extract the parameters of the proposed model on I

中文翻译：

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正向电流-电压-温度提取固有肖特基势垒高度的方法

肖特基势垒高度SBH基于异质结控制流入电子和光电设备的电流。通过常规方法预测的SBH通过正向电流-电压-温度IVT对温度敏感。这在异质结器件的应用中提出了一些问题。因此，人们寻求一种提取每个新异质结的本征SBH的技术。本文建立了一个简单的模型，用于确定正向IVT特性，实际热电子电流，I tc和SBH。该模型是通过考虑量子统计和现象学引入的。所提出的方法可以耦合每个异质结电流的两个独立曲线，并有助于预测在任何测量条件下的电流值。所提出的模型已通过20多个实验I–V曲线成功验证。因此，应用最小二乘非线性拟合在I上提取所提出模型的参数