AlGaN polarization doped field effect transistors (POLFETs) were irradiated with neutrons at an average energy of 4.5 MeV and doses of 5 × 10 10 n/cm −2 and 5 × 10 11 n/cm −2 . Only 1% and 3% reduction in DC current was noted at these fluences, respectively. Drain and gate leakage current was only found to have degraded at 5 × 10 11 n/cm −2 , lower fluences producing nominal changes. 100 kHz operation demonstrated near ideal performance prior to irradiation, and only slight degradation after for most stringent duty cycles and highest gate voltages used in this study.

中文翻译：

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AlGaN极化掺杂场效应晶体管的中子辐照

用中子以4.5 MeV的平均能量和5×10 10 n / cm -2和5×10 11 n / cm -2的剂量对AlGaN极化掺杂的场效应晶体管（POLFET）进行辐照。在这些通量下，直流电流仅分别降低了1％和3％。仅发现漏极和栅极泄漏电流在5×10 11 n / cm -2处降低，较低的通量产生标称变化。在本研究中使用的最严格的占空比和最高的栅极电压之后，在辐照之前100 kHz的操作表现出接近理想的性能，并且仅在轻微的劣化。