Abstract Recently, two-dimensional Transition metal dichalcogenides (TMDCs) have attracted widespread attention due to their unique electrical and optical properties. Specially, the monolayer WS2 has high photoluminescence intensity and short response time, and has high application potential in optoelectronic devices. Here, a method for synthesizing single-layer WS2 crystal by atmospheric pressure chemical vapor deposition (CVD) is reported. The triangular and regular hexagonal monolayer WS2 crystals are directly synthesized on Si/SiO2 substrate. Moreover, the measurement results show that the quality of the single-layer WS2 crystal can be further improved through adjusting the growth parameters, such as growth temperature and growth time.

中文翻译：

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通过控制生长温度和时间对单层 WS2 进行 CVD 生长

摘要 近年来，二维过渡金属二硫属化物（TMDCs）由于其独特的电学和光学性质而受到广泛关注。特别是单层WS2具有高光致发光强度和短响应时间，在光电器件中具有很高的应用潜力。在这里，报道了一种通过大气压化学气相沉积 (CVD) 合成单层 WS2 晶体的方法。三角形和正六边形单层 WS2 晶体直接在 Si/SiO2 衬底上合成。此外，测量结果表明，通过调整生长温度和生长时间等生长参数，可以进一步提高单层WS2晶体的质量。