Ferroelectric nonvolatile memory (FeNVM) field effect transistors (FETs) are reported using p‐channel MoTe₂ and P(VDF‐TrFE) ferroelectric polymer, and furthermore a complementary type memory cell is demonstrated coupling p‐ and n‐channel MoTe₂ FETs. A top‐gate p‐FET with P(VDF‐TrFE) and a bottom‐gate n‐FET with Al₂O₃ dielectric are integrated as one cell. Such a complementary type cell is more desirable research path in respect of power consumption but rare to find in 2D‐based memory reports. Among many 2D semiconductors MoTe₂ is selected, because p‐type MoTe₂‐based FeNVM is not reported yet, and also because it is relatively easy to obtain both p‐ and n‐channel from the homogeneous MoTe₂. The integrated device also operates as a complementary metal oxide semiconductor inverter in a small voltage range from 0 to ≈2.5 V, but primarily works as a FeNVM circuit when p‐channel with top P(VDF‐TrFE) is biased with high voltages over the coercive electric field (E_c) of the polymer. The bottom gate n‐channel transistor operates as a switching device in the FeNVM cell, allowing voltage output signals during device operations. It is concluded that the complementary type FeNVM cell is practical and novel enough to report as a first time demonstration based on 2D MoTe₂.

中文翻译：

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具有P通道和N通道MoTe2的互补型铁电存储器晶体管电路

使用p沟道MoTe ₂和P（VDF-TrFE）铁电聚合物报道了铁电非易失性存储器（FeNVM）场效应晶体管（FET），此外，还展示了互补型存储单元耦合p和n沟道MoTe ₂ FET。具有P（VDF-TrFE）的顶栅p-FET和具有Al ₂ O ₃电介质的底栅n-FET集成为一个单元。就功耗而言，这种互补型单元是更理想的研究途径，但在基于2D的内存报告中却很少见。在许多2D半导体中选择了MoTe ₂，因为p型MoTe ₂基于FeNVM的研究尚未被报道，也是因为从同质MoTe ₂获得p和n通道相对容易。集成器件还可以在0至≈2.5V的小电压范围内作为互补金属氧化物半导体逆变器工作，但当顶部P（VDF-TrFE）的p沟道在整个晶体管上施加高压时，主要用作FeNVM电路。聚合物的矫顽电场（E _c）。底栅n沟道晶体管在FeNVM单元中用作开关器件，在器件工作期间允许电压输出信号。结论是，互补型FeNVM电池既实用又新颖，足以作为基于2D MoTe _2的首次演示进行报道。