In this study, highly reliable and accurate weight‐modification behaviors are realized using a W/Al₂O₃ (3 nm)/HfO₂ (7 nm)/TiN memristive device. The accuracy of the simulated inference of the MNIST dataset when considering the weight‐modification behavior is ≈95%. It is determined the optimal programming voltage pulsing conditions considering i) a high linearity in the weight‐modification, ii) symmetry between potentiation and depression, and iii) an alleviation of the voltage‐driving circuit overhead for the related part of weight‐modification process. Particular emphasis is placed on the last concern, and thus, the fixed shape of each programming pulse for both potentiation and depression are utilized. The optimal pulse design is 500 µs for the pulse rising, plateau, and falling times and a 2 V amplitude at the absolute scale. Additionally, the nonparametric method to evaluate the linearity and symmetry as opposed to the application of several parametric methods are proposed. The nonparametric method is based on an evaluation of actual data rather than models, and thus considers the actual variability in the conductance change, which is otherwise often ignored in the parameter optimization process.

中文翻译：

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基于HfO2的忆阻设备中的高度线性和对称重量修改，可实现高精度重量输入

在这项研究中，使用W / Al ₂ O ₃（3 nm）/ HfO ₂实现了高度可靠且准确的重量修正行为（7 nm）/ TiN忆阻器件。当考虑权重修改行为时，MNIST数据集的模拟推断的准确性为≈95％。确定以下因素时的最佳编程电压脉冲条件：i）重量调整过程中的高线性度； ii）电位和压降之间的对称性； iii）减轻重量调整过程中相关部分的电压驱动电路开销。特别强调的是最后一个问题，因此，利用每个用于增强和抑制的编程脉冲的固定形状。最佳的脉冲设计是500 µs，以保证脉冲的上升，稳定和下降时间，以及绝对刻度下的2 V振幅。另外，与几种参数方法的应用相反，提出了一种非线性方法来评价线性和对称性。非参数方法基于对实际数据的评估而不是模型，因此考虑了电导率变化的实际可变性，否则在参数优化过程中通常会忽略该可变性。