Abstract InGaAs/InAsSb superlattices (SLs) were grown on InAs substrates by metal-organic chemical vapor deposition (MOCVD) for potential applications in mid-wavelength infrared photodetectors. Three In1-xGaxAs/InAs0.73Sb0.27 ternary SL samples, with x = 0.2, 0.25, and 0.3, were grown and investigated by X-ray diffraction, atomic force microscopy and photoluminescence. Excellent structural qualities were achieved with lattice mismatches of less than 0.15% and atomically smooth surfaces with a roughness of only 0.18–0.19 nm. Strong photoluminescence (PL) emissions were observed at around 3.7 μm at 77 K. Besides, Varshni fitting indicates the temperature-sensitive parameter α in the InGaAs/InAsSb SLs is only half of that in InAs/InAsSb SLs, making them suitable for high temperature operation.

中文翻译：

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InGaAs/InAsSb 超晶格的生长和表征，用于中波长红外光电探测器的金属有机化学气相沉积

摘要 InGaAs/InAsSb 超晶格 (SL) 通过金属有机化学气相沉积 (MOCVD) 在 InAs 衬底上生长，用于中波长红外光电探测器的潜在应用。三个 In1-xGaxAs/InAs0.73Sb0.27 三元 SL 样品（x = 0.2、0.25 和 0.3）生长并通过 X 射线衍射、原子力显微镜和光致发光进行研究。通过小于 0.15% 的晶格失配和粗糙度仅为 0.18-0.19 nm 的原子级光滑表面，实现了出色的结构质量。在 77 K 下在 3.7 μm 附近观察到强光致发光 (PL)。此外，Varshni 拟合表明 InGaAs/InAsSb SL 中的温度敏感参数 α 仅为 InAs/InAsSb SL 中的一半，使其适用于高温手术。