Abstract

A model is proposed that describes the change in the charge state of metal-insulator-semiconductor (MIS) structures and sensors made from it under the conditions of the simultaneous effect of radiation ionization and high-field injection of electrons from a semiconductor. The proposed model takes into account the interaction of injected electrons with holes generated by radiation and high-field ionization and holes trapped at the interface of the SiO₂ film with a semiconductor, as well as the generation of surface states during the annihilation of part of holes during their interaction with injected electrons. It is shown that the MIS sensor, where the high-field injection of electrons into the dielectric film takes place, can be used to control the intensity of radiation by determining the radiation ionization current from the time dependence of the voltage across the sensor using the proposed model. It has been established that in the high-field electron injection mode, a significant increase in the dose sensitivity of MIS sensors is possible, but at the same time, the operating time and dose range of the MIS sensor can be significantly reduced.

中文翻译：

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在高场电子注入模式下使用MIS辐射传感器

摘要

提出了一个模型，该模型描述了在辐射电离和半导体电子从高场注入的同时作用下，金属绝缘体半导体（MIS）结构和由其制成的传感器的电荷状态变化。提出的模型考虑了注入的电子与由辐射和高场电离产生的空穴以及在SiO ₂界面处捕获的空穴的相互作用带有半导体的薄膜，以及在空穴与注入的电子相互作用期间the灭部分空穴的过程中产生的表面态。结果表明，MIS传感器可以在电子发生高场注入介电膜的情况下，通过根据传感器两端电压的时间依赖性确定辐射电离电流，来控制辐射强度。建议的模型。已经确定，在高场电子注入模式下，MIS传感器的剂量灵敏度有可能显着增加，但与此同时，MIS传感器的工作时间和剂量范围可以大大减少。