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Electric Noise in Field-Effect Transistors Based on ZnO:Li Films
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.6 ) Pub Date : 2020-07-20 , DOI: 10.3103/s1068337220020127
R. K. Hovsepyan , N. R. Aghamalyan , E. A. Kafadaryan , A. A. Arakelyan , G. G. Mnatsakanyan , S. I. Petrosyan

Abstract

The noise characteristics of field-effect transistors based on ZnO: Li films and obtained by the diffusion technology are studied. The results of an experimental study of the noise characteristics of the drain current are presented, namely, the Random Telegraph Signal and 1/f-noise. The spectral density of the drain current noises in the low-frequency range (10–5000 Hz) has a classical 1/f-dependence. It was found that at low concentrations of the acceptor impurity, 1/f noise is observed, and with an increase in the acceptor impurity concentration the Random Telegraph Signal prevails.



中文翻译:

基于ZnO:Li薄膜的场效应晶体管中的电噪声

摘要

研究了通过扩散技术获得的基于ZnO:Li薄膜的场效应晶体管的噪声特性。给出了对漏极电流的噪声特性进行实验研究的结果,即随机电报信号和1 / f噪声。低频范围(10–5000 Hz)中的漏极电流噪声的频谱密度具有经典的1 / f相关性。发现在低浓度的受主杂质下,观察到1 / f噪声,并且随着受主杂质浓度的增加,随机电报信号占优势。

更新日期:2020-07-20
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