Thermal conductivity κ(T) of bulk single crystal GaN having wurtzite crystal structure has been measured in the direction parallel to the hexagonal plane at temperatures T between 5 and 410 K. The room temperature value of thermal conductivity is equal to 213±7 W m⁻¹ K⁻¹. The κ(T) reaches a peak of about 3770 W m⁻¹ K⁻¹ at T ≈ 28 K. The high value of κ(T) at low temperatures indicates high quality of the sample under study. The lowest-temperature results can be very satisfactory explained by McCurdy, Maris, and Elbaum theory of phonon transport in the diffuse boundary scattering regime. Above the peak, the measured κ(T) decreases steeply even at high temperatures. The discrepancies between our experimental results and recent first-principles calculations are discussed.

在5到410 K之间的温度T下，在与六边形平面平行的方向上测量了具有纤锌矿晶体结构的块状单晶GaN的导热系数κ（T）。导热系数的室温值等于213±7 W m ^-1 K ^-1。该κ（Ť）达到约3770脉冲W M的峰值^-1 ķ ^-1在Ť≈ 28 K.的高值κ（Ť）在低温下表示所研究样品的高质量。McCurdy，Maris和Elbaum在扩散边界散射法中的声子传输理论可以解释最低温度结果。在峰值以上，即使在高温下，测得的κ（T）也会急剧下降。讨论了我们的实验结果与最近的第一性原理计算之间的差异。