The present paper reports the dc conductivity measurement up to 100 V for pallets of Te₁₅ (Se_100-xBi_x)₈₅ (x=0, 1, 2, 3, 4 at %) glassy alloys in temperature range (303-343 K). The dc conductivity is calculated from the I-V characteristics curves of the pellets of bulk samples prepared by melt quenching technique. The samples obey Ohm’s law in the lower (0-25 V) voltage range whereas the behaviour in the higher (25-100 V) voltage range is non-ohmic. The experimental results for all the samples fit well with the theory of space charge limited conduction SCLC for uniform distribution of localized states in the mobility gap. The density of defect states is calculated for the glassy alloys and is found to increase with Bi content. The increase in defect density of states can be explained on basis of electro negativity difference of Bi as compared to host elements. The increase in dc conductivity is probably due to Se-Bi bond concentration in the Se-Te-Bi glasses.


中文翻译：

---

Te15（Se100-xBix）85非晶态玻璃态合金的导电机理和状态缺陷密度

本文报告了Te ₁₅（Se _100-x Bi _x）₈₅托盘的直流电导率测量值最高为100 V（x = 0、1、2、3、4 at％）温度范围（303-343 K）中的玻璃态合金。直流电导率是通过熔融淬火技术制备的散装样品的颗粒的IV特性曲线计算得出的。样品在较低（0-25 V）电压范围内遵循欧姆定律，而在较高（25-100 V）电压范围内的行为则为非欧姆性。所有样品的实验结果都与空间电荷限制传导SCLC理论相吻合，从而使迁移率间隙中的局部状态均匀分布。计算出玻璃态合金的缺陷态密度，发现其随Bi含量增加。可以基于Bi与主体元素的电负性差异来解释状态缺陷密度的增加。