This paper aims to describe the fabrication, packaging and testing of a resistive loaded p-channel metal-oxide-semiconductor field-effect transistor-based (MOSFET-based) current mirror-integrated pressure transducer.,Using the concept of piezoresistive effect in a MOSFET, three identical p-channel MOSFETs connected in current mirror configuration have been designed and fabricated using the standard polysilicon gate process and microelectromechanical system (MEMS) techniques for pressure sensing application. The channel length and width of the p-channel MOSFETs are 100 µm and 500 µm, respectively. The MOSFET M1 of the current mirror is the reference transistor that acts as the constant current source. MOSFETs M2 and M3 are the pressure-sensing transistors embedded on the diaphragm near the mid of fixed edge and at the center of the square diaphragm, respectively, to experience both the tensile and compressive stress developed due to externally applied input pressure. A flexible square diaphragm having a length of approximately 1,000 µm and thickness of 50 µm has been realized using deep-reactive ion etching of silicon on the backside of the wafer. Then, the fabricated sensor chip has been diced and mounted on a TO8 header for the testing with pressure.,The experimental result of the pressure sensor chip shows a sensitivity of approximately 0.2162 mV/psi (31.35 mV/MPa) for an input pressure of 0-100 psi. The output response shows a good linearity and very low-pressure hysteresis. In addition, the pressure-sensing structure has been simulated using the parameters of the fabricated pressure sensor and from the simulation result a pressure sensitivity of approximately 0.2283 mV/psi (33.11 mV/MPa) has been observed for input pressure ranging from 0 to 100 psi with a step size of 10 psi. The simulated and experimentally tested pressure sensitivities of the pressure sensor are in close agreement with each other.,This current mirror readout circuit-based MEMS pressure sensor is new and fully compatible to standard CMOS processes and has a promising application in the development CMOS-MEMS-integrated smart sensors.

中文翻译：

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PMOS电流镜集成MEMS压力传感器的制作与测试

本文旨在描述基于电阻加载的 p 沟道金属氧化物半导体场效应晶体管（基于 MOSFET）电流镜集成压力传感器的制造、封装和测试。 MOSFET，三个相同的 p 沟道 MOSFET，以电流镜配置连接，使用标准多晶硅栅极工艺和微机电系统 (MEMS) 技术设计和制造，用于压力传感应用。p 沟道 MOSFET 的沟道长度和宽度分别为 100 µm 和 500 µm。电流镜的 MOSFET M1 是用作恒流源的参考晶体管。MOSFET M2 和 M3 是压力感应晶体管，嵌入在固定边缘中间附近和方形膜片中心的膜片上，分别经历由于外部施加的输入压力而产生的拉伸和压缩应力。长约 1,000 µm 且厚度为 50 µm 的柔性方形隔膜已通过对晶片背面的硅进行深度反应离子蚀刻而实现。然后，将制造的传感器芯片切割并安装在 TO8 接头上进行压力测试。压力传感器芯片的实验结果显示，对于输入压力为 0.2162 mV/psi (31.35 mV/MPa) 的灵敏度约为0-100 磅/平方英寸。输出响应显示出良好的线性和非常低的压力滞后。此外，使用制造的压力传感器的参数对压力传感结构进行了模拟，模拟结果的压力灵敏度约为 0.2283 mV/psi (33. 11 mV/MPa) 的输入压力范围为 0 到 100 psi，步长为 10 psi。压力传感器的模拟和实验测试的压力灵敏度彼此非常吻合。,这种基于电流镜读出电路的 MEMS 压力传感器是新的，完全兼容标准 CMOS 工艺，在 CMOS-MEMS 开发中具有广阔的应用前景- 集成智能传感器。