Ti/GO/n‐InP Schottky barrier diode (SBD) is obtained by growing graphene oxide (GO) film on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of GO as the interfacial layer on device performance of Ti/GO/n‐InP SBD is investigated in detail. The optical absorbance spectra show that bandgap energy of the GO film is 3.57 eV. The optical transmittance value of 79.5% is in consistent with the absorbance spectra of GO film. The barrier heights (BHs) that are estimated for the Ti/GO/n‐InP SBD vary from 0.263 to 0.980 eV (I–V) and 1.328 to 1.006 eV (C–V) from the I–V and C–V measurements in the temperature range of 100–400 K. The contradiction between the BHs from the I–V and C–V characteristics is discussed. The mean BH values are found to be Φ_b01 = 0.98 eV (250–400 K) and Φ_b02 = 0.73 eV (100–250 K) from the Φ_b0–1/2kT plot. From the modified Richardson plots based on a Gaussian distribution of BH, Φ_b01 = 0.93 (250–400 K) and Φ_b02 = 0.69 eV (100–250 K) and A* is calculated to be 12.44 and 12.73 A cm⁻² K⁻², respectively. The I–V–T and C–V–T measurements demonstrate that carrier transport mechanism of Ti/GO/n‐InP is well explained by thermionic emission (TE) mechanism with a double Gaussian distribution of the Schottky barrier heights (SBHs).

中文翻译：

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喷涂热解法沉积石墨烯氧化物夹层的Ti / n-InP肖特基二极管的结构，光学和电学特性

Ti / GO / n-InP肖特基势垒二极管（SBD）是通过使用简单且经济的喷雾热解方法在n / InP半导体上生长氧化石墨烯（GO）膜而获得的。详细研究了GO作为界面层对Ti / GO / n-InP SBD器件性能的影响。光吸收光谱表明，GO膜的带隙能量为3.57eV。79.5％的透光率值与GO膜的吸收光谱一致。Ti / GO / n-InP SBD估计的势垒高度（BHs）从I–V和C–V测量值变化为0.263至0.980 eV（IV）和1.328至1.006 eV（C–V）在从温度范围的100-400行李处理系统之间K.的矛盾I-V和讨论了C–V特性。平均BH值被发现为Φ _{b 01}  = 0.98电子伏特（250-400 K）和Φ _{b 02} 从Φ= 0.73电子伏特（100-250 K）_{b 0} -1/2 KT情节。基于BH的高斯分布的改性理查森地块，Φ _{b 01}  = 0.93（250-400 K）和Φ _{b 02}  = 0.69电子伏特（100-250 K）和阿*被计算为12.44和12.73甲厘米^-分别为²  K ^-2。的I-V-T和C-V-T 测量结果表明，Ti / GO / n-InP的载流子传输机制可以很好地解释为热电子发射（TE）机制和肖特基势垒高度（SBHs）的双高斯分布。