Red, green, and blue electroluminescence (EL) in semipolar (11‐22) GaN‐based light‐emitting diodes (LEDs) is achieved using SiO₂ hexagonal patterns epitaxial lateral overgrowth (HP‐ELO). The size, density, and area of arrowhead‐like surface structure of the semipolar (11‐22) HP‐ELO GaN are significantly affected by increasing the SiO₂ hexagonal patterns from 6.0 to 15.0 μm. The full width at half maximum and the blueshift wavelength of EL spectra increases with increasing from 6.0 to 9.0 μm, and then decreases with increasing the hexagonal pattern width to 15.0 μm. These results show a similar tendency to the surface area of arrowhead‐like structure. In addition, micro‐EL images show that indium localization‐induced low energy emission initiates at the front end of arrowhead‐like pattern, and then blueshifted emissions propagate to the side edges as the injection current increases. Therefore, it suggests that HP‐ELO can control the arrowhead‐like surface structure composed of different indium compositions, which can achieve red, green, and blue emissions of a semipolar (11‐22) HP‐ELO GaN‐based LED.

中文翻译：

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铟本地化导致的半极性（11-22）GaN基发光二极管的红色，绿色和蓝色发射

半透明（11-22）GaN基发光二极管（LED）中的红色，绿色和蓝色电致发光（EL）是使用SiO ₂六角形图案外延横向过生长（HP-ELO）实现的。SiO ₂增加会显着影响半极性（11-22）HP-ELO GaN的箭头状表面结构的大小，密度和面积从6.0到15.0μm的六边形图案。EL光谱的半峰全宽和蓝移波长从6.0μm增加到9.0μm，然后随着六边形图案宽度增加到15.0μm而减小。这些结果显示出与箭头状结构的表面积相似的趋势。此外，micro-EL图像显示铟本地化引起的低能发射始于箭头状图案的前端，然后随着注入电流的增加，蓝移发射会传播到侧边缘。因此，这表明HP-ELO可以控制由不同铟成分组成的箭头状表面结构，可以实现半极性（11-22）HP-ELO GaN基LED的红色，绿色和蓝色发射。