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Development of a neutron imaging sensor using INTPIX4-SOI pixelated silicon devices
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment ( IF 1.4 ) Pub Date : 2020-07-18 , DOI: 10.1016/j.nima.2020.164400 Y. Kamiya , T. Miyoshi , H. Iwase , T. Inada , A. Mizushima , Y. Mita , K. Shimazoe , H. Tanaka , I. Kurachi , Y. Arai
中文翻译:
使用INTPIX4-SOI像素化硅器件开发中子成像传感器
更新日期:2020-07-18
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment ( IF 1.4 ) Pub Date : 2020-07-18 , DOI: 10.1016/j.nima.2020.164400 Y. Kamiya , T. Miyoshi , H. Iwase , T. Inada , A. Mizushima , Y. Mita , K. Shimazoe , H. Tanaka , I. Kurachi , Y. Arai
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor’s responses for neutrons. Detection efficiency is measured to be around 1.5% for thermal neutrons. Upper bound of spatial resolution is evaluated to be in terms of a standard deviation of the line spread function.
中文翻译:
使用INTPIX4-SOI像素化硅器件开发中子成像传感器
我们已经开发了一种基于INTPIX4-SOI像素化硅器件的中子成像传感器。在几个中子设施中进行中子辐照测试,以调查传感器对中子的响应。据测量,热中子的探测效率约为1.5%。空间分辨率的上限被评估为 根据线扩散函数的标准偏差。