In the past few years, there has been growing interest in the development of silicon sensors able to simultaneously measure accurately the time of passage and the position of impinging charged particles. In this contribution, a review of the progresses in the design of UFSD (Ultra-Fast Silicon Detectors) sensors, manufactured at the FBK (Fondazione Bruno Kessler) Foundry, aiming at tracking charged particles in 4 dimensions, is presented. The state-of-the-art UFSD sensors, with excellent timing capability, are planned to be used in both ATLAS and CMS experiments detector upgrade, in order to reduce the background due to the presence of overlapping events in the same bunch crossing.

The latest results on sensors characterization including time resolution, radiation resistance and uniformity of the response are here summarized, pointing out the interplay between the design of the gain layer and the UFSD performances. The research is now focusing on the maximization of the sensor fill factor, to be able to reduce the pixel size, exploring the implementation of shallow trenches for the pixel isolation and the development of resistive AC-coupled UFSD sensors. In conclusion, a brief review on research paths tailored for detection of low energy X-rays or for low material budget applications is given.

在过去的几年中，人们对硅传感器的开发越来越感兴趣，该传感器能够同时精确地测量通过时间和撞击带电粒子的位置。在此文稿中，对FBSD（Fondazione Bruno Kessler）铸造厂生产的UFSD（超快速硅探测器）传感器的设计进展进行了回顾，旨在追踪4维带电粒子。计划将具有出色定时能力的最新UFSD传感器用于ATLAS和CMS实验检测器升级，以减少由于同一束交叉中存在重叠事件而导致的背景。

本文总结了传感器特性的最新结果，包括时间分辨率，辐射电阻和响应的均匀性，指出了增益层设计和UFSD性能之间的相互作用。现在的研究集中在传感器填充因子的最大化上，以便能够减小像素尺寸，探索用于像素隔离的浅沟槽的实现以及电阻性交流耦合UFSD传感器的发展。最后，简要回顾了专为检测低能X射线或低材料预算应用而设计的研究路径。