Abstract Rare-earth nickelates possess intrinsic charge order, orbital order, and electron-lattice coupling, which make them very interesting for applications in oxide-based electronic devices. In this study, we grow NdNiO3–δ (NNO) films with oxygen pressures changing from 27 Pa to 10-5 Pa. With decreasing oxygen pressure, the antiferromagnetic state of the NNO film becomes a ferromagnetic state, and the resistance increases significantly. According to combined X-ray absorption spectroscopy and X-ray linear dichroism measurements, the ratio of Ni2+-ions increases with decreasing oxygen-pressure, and the preferred orbital occupation changes from x 2 -y 2 to 3z2-r 2 . In addition, using the ionic-liquid gating method to control the migration of oxygen vacancies, both the magnetic properties and resistance of NNO films can be modulated reversibly. The oxygen vacancy induces a valence in the Ni ions and the orbital occupation changes, which alters the magnetic properties and the electronic transport in these NNO films. This study describes a novel tunable method for electronic devices that use NdNiO3–δ films, and opens new doors for future improvements and functionalities.

中文翻译：

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NdNiO3-外延薄膜磁性和输运特性的可逆控制☆

摘要 稀土镍酸盐具有固有的电荷顺序、轨道顺序和电子-晶格耦合，这使得它们在基于氧化物的电子器件中的应用非常有趣。在这项研究中，我们在氧压从 27 Pa 变为 10-5 Pa 的情况下生长 NdNiO3-δ (NNO) 膜。随着氧压的降低，NNO 膜的反铁磁态变为铁磁态，电阻显着增加。根据结合X射线吸收光谱和X射线线性二色性测量，Ni2+-离子的比例随着氧压的降低而增加，并且优选的轨道占据从x 2 -y 2 变为3z2-r 2 。此外，使用离子液体门控方法来控制氧空位的迁移，NNO 薄膜的磁性能和电阻都可以可逆地调节。氧空位引起 Ni 离子的价态和轨道占据的变化，这改变了这些 NNO 薄膜中的磁性和电子传输。这项研究描述了一种用于使用 NdNiO3-δ 薄膜的电子设备的新型可调方法，并为未来的改进和功能打开了新的大门。