Abstract

Low-energy (50–200 eV) He and Ar ion irradiation of on Si/SiO₂-based nanoporous materials is modeled with the use of the molecular dynamics method. The obtained results corroborate the experimentally observed effect of densification of near-surface layers of materials with small-size pores and low porosity due to the ion-induced pore collapse process. The differences in the He and Ar ion irradiation of nanoporous materials and the influence of ion energy on the intensity of structural changes are studied.

中文翻译：

---

纳米多孔Si / SiO 2基材料的低能He和Ar离子辐照特性

摘要

使用分子动力学方法，对基于Si / SiO ₂的纳米多孔材料的低能（50-200 eV）He和Ar离子辐射进行了建模。所获得的结果证实了在实验中观察到的由于离子诱导的孔塌陷过程而致使具有小孔和低孔隙率的材料的近表层致密化的效果。研究了纳米多孔材料氦和氩离子辐照的差异以及离子能量对结构变化强度的影响。