Abstract

A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO_0.5). It is established that the use of indium in the course of a-SiO_0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO_0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

中文翻译：

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铟诱导非晶亚氧化硅薄膜的结晶

摘要

获得多晶硅的一种新方法，提出了一种基于与化学计量系数0.5（非晶硅低氧化物的薄膜的铟诱导结晶一-SiO _0.5）。已经确定，在使用过程中使用铟的一个-SiO _0.5退火允许结晶化温度降低到600℃，这是显著低于该材料（850℃）的固相晶化的温度。铟在高真空下诱导的-SiO _0.5结晶过程导致形成独立的微米级晶体硅颗粒。