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Wavelet Analysis of RTS Noise in CMOS Image Sensors Irradiated with High Energy Photons
IEEE Transactions on Nuclear Science ( IF 1.8 ) Pub Date : 2020-07-01 , DOI: 10.1109/tns.2020.2995309
Ben Hendrickson , Ralf Widenhorn , Morley Blouke , Denis Heidtmann , Erik Bodegom

This article explores the phenomenon of dark current random telegraph signal (DC-RTS) noise in commercial off-the-shelf CMOS image sensors. Five sensors were irradiated with high-energy photons to a variety of doses and analyzed with a wavelet-based signal reconstruction algorithm. The algorithm is explained in detail and the radiation effects on individual pixels are discussed. Finally, the production rate of RTS pixels as a function of dose is explored, providing information on the underlying defect structure responsible for this noise source.

中文翻译:

高能光子照射下 CMOS 图像传感器中 RTS 噪声的小波分析

本文探讨了商用现成 CMOS 图像传感器中的暗电流随机电报信号 (DC-RTS) 噪声现象。五个传感器被高能光子照射到各种剂量,并使用基于小波的信号重建算法进行分析。详细解释了该算法并讨论了对单个像素的辐射影响。最后,研究了作为剂量函数的 RTS 像素的产生率,提供了有关负责该噪声源的潜在缺陷结构的信息。
更新日期:2020-07-01
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