This article proposes a novel differential through-silicon via (D-TSV) structure, which is filled with vertically aligned carbon nanotube (VACNT) array. Two metal pads are deposited on the sides of the surface of the proposed D-TSV to form differential signal transmission paths. The equivalent circuit model is established for the proposed D-TSV, with the frequency-dependent impedance extracted using partial-element equivalent-circuit (PEEC) method. By virtue of the equivalent circuit model, the electrical performance of the proposed D-TSV is investigated, with some design guidance presented.

中文翻译：

---

3-D IC 中基于碳纳米管的差分硅通孔的建模

本文提出了一种新型差分硅通孔 (D-TSV) 结构，该结构填充有垂直排列的碳纳米管 (VACNT) 阵列。两个金属焊盘沉积在建议的 D-TSV 表面的侧面，以形成差分信号传输路径。为提出的 D-TSV 建立等效电路模型，使用部分元件等效电路 (PEEC) 方法提取频率相关阻抗。借助等效电路模型，研究了所提出的 D-TSV 的电气性能，并提供了一些设计指导。