This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source ( L_OV ). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and L_OV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing ( SS ) and the leakage currents through a spacer technology and strained Si _0.6 Ge _0.4 . The optimal values of IGS and L_OV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a L_OV ≈ L_G /2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and I_on / I_off = 10 ⁹ are achieved.

中文翻译：

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多通道线隧道FET的最佳门间隔离和重叠源

这项工作包括通过缩放栅极间间隔（IGS）和重叠源极（mCLTFET）设计和仿真多通道线隧道场效应晶体管（mCLTFET）。 大号_OV ）。工作范围是通过考虑几何结构，低带隙材料，IGS和大号_OVmCLTFET的数量。设计该结构时不会减小亚阈值摆幅（ SS ）和通过隔离技术的泄漏电流和应变Si _0.6 Ge _0.4 。IGS和的最佳值大号_OV在建议的设备受到几个物理约束的情况下，估计多信道概念的带宽。IGS≈10 nm和大号_OV ≈ 大号_{g ^} / 2被报告为低于8纳米技术节点的合适选择，其中 SS = 18 mV / dec和 我_在 / 我_走了= 10 ⁹实现。