A new self-converging programming characteristic in a single-poly floating-gate memory cell with full-compatibility to a CMOS logic technology is observed and studied. A uniquely design cell with a narrow-bridging line between two coupling capacitors promotes a localized charging effect at the electron tunneling site, leading to clamping of threshold voltage states. Through this mechanism, the new multi time programmable (MTP) cells exhibit tight threshold voltage distributions for multi-level cells (MLC) operations. Improved cycling reliability and one-shot multi-level programming has been fully demonstrated in this work.

中文翻译：

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用于多级逻辑非易失性存储器应用的窄桥浮栅单元中的自钳位编程

观察和研究了与 CMOS 逻辑技术完全兼容的单多晶浮栅存储单元中的一种新的自会聚编程特性。在两个耦合电容器之间具有窄桥接线的独特设计单元促进了电子隧道位置的局部充电效应，从而导致阈值电压状态的钳位。通过这种机制，新的多次可编程 (MTP) 单元表现出用于多级单元 (MLC) 操作的紧密阈值电压分布。改进的循环可靠性和一次性多级编程已在这项工作中得到充分展示。