Abstract This study investigates a time-reduced sintering process for die attachment, prepared, within a processing time of several seconds using dry nanosilver film. The effects of three main sintering parameters, sintering temperature (220 to 300 °C), sintering time (1 to 9 s) and bonding pressure (6 to 25 MPa) on the resultant shear strength are investigated using uniform design and single factor experimental trials. The shear strength data series for each of the experimental trials was statistically analyzed to indicate any deviation from normal distribution. The resulting shear strength values were regressed or fitted, and further analyzed by polynomial and kinetic-like equations to estimate the relationship between the shear strength and sintering parameters. The regression analysis for shear strength may not only be used for explaining mass transportation mechanisms, but also for identifying the proposed manufacturability of the time-reduced sintering process.

中文翻译：

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使用干纳米银薄膜通过时间减少的烧结工艺制备的芯片附件的剪切强度

摘要 本研究研究了使用干纳米银膜在几秒钟的处理时间内制备的用于芯片附着的缩短时间的烧结过程。使用均匀设计和单因素实验试验研究了三个主要烧结参数，烧结温度（220 至 300 °C）、烧结时间（1 至 9 秒）和结合压力（6 至 25 MPa）对所得剪切强度的影响. 对每个实验试验的剪切强度数据系列进行统计分析以表明与正态分布的任何偏差。对所得剪切强度值进行回归或拟合，并通过多项式和动力学类方程进一步分析，以估计剪切强度与烧结参数之间的关系。