Abstract

Samples of nonvolatile electrically reprogrammable memory elements (memristors) based on electroformed TiN–TiO₂–SiO₂–W open sandwich structures, made using thin-film technology, are studied. A technique is developed and experimental studies are performed of the effect of oxygen pressure over the surface of the insulating gap of structures and the current limiting mode during the action of a switching pulse from a low to a highly conductive state on the characteristics of memory elements. The existence of a threshold value of oxygen pressure at which switching stops and its dependence on the value of the limiting current are shown. An interpretation of the experimental results based on the ideas developed on the mechanisms of the processes of the formation and disappearance of particles of the conducting phase in the insulating gap of an electroformed structure is presented.

中文翻译：

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基于电铸开放式夹心结构的氧气压力对存储器中开关的影响

摘要

基于电铸TiN–TiO ₂ –SiO ₂的非易失性电可重编程存储元件（忆阻器）样品-研究了采用薄膜技术制成的W型三明治结构。开发了一种技术，并进行了实验研究，研究了在结构上的绝缘间隙表面上的氧气压力对存储元件特性的影响，即从低到高导通状态的切换脉冲作用下电流限制模式的影响。 。示出了切换停止的氧气压力阈值的存在及其对极限电流值的依赖性。提出了基于基于在电铸结构的绝缘间隙中导电相颗粒的形成和消失过程的机理的思想对实验结果的解释。