当前位置: X-MOL 学术Nano Res. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Edge-enriched MoS 2 for kinetics-enhanced potassium storage
Nano Research ( IF 9.9 ) Pub Date : 2020-07-17 , DOI: 10.1007/s12274-020-2925-3
Guangshen Jiang , Xiaosa Xu , Haojie Han , Changzhen Qu , Hlib Repich , Fei Xu , Hongqiang Wang

Potassium-ion batteries (PIBs) hold great promise as alternatives to lithium ion batteries in post-lithium age, while face challenges of slow reaction kinetics induced by the inherent characteristics of large-size K+. We herein show that creating sufficient exposed edges in MoS2 via constructing ordered mesoporous architecture greatly favors for improved kinetics as well as increased reactive sites for K storage. The engineered MoS2 with edge-enriched planes (EE-MoS2) is featured by three-dimensional bicontinuous frameworks with ordered mesopores of ∼ 5.0 nm surrounded by thin wall of ∼9.0 nm. Importantly, EE-MoS2 permits exposure of enormous edge planes at pore walls, renders its intrinsic layer spacing more accessible for K+ and accelerates conversion kinetics, thus realizing enhanced capacity and high rate capability. Impressively, EE-MoS2 displays a high reversible charge capacity of 506 mAh·g−1 at 0.05 A·g−1, superior cycling capacities of 321 mAh·g−1 at 1.0 A·g−1 after 200 cycles and a capacity of 250 mAh·g−1 at 2.0 A·g−1, outperforming edge-deficient MoS2 with nonporous bulk structure. This work enlightens the nanoarchitecture design with abundant edges for improving electrochemical properties and provides a paradigm for exploring high-performance PIBs.



中文翻译:

边缘富集的MoS 2用于动力学增强的钾存储

在后锂时代,钾离子电池(PIB)有望替代锂离子电池,同时面临着由大尺寸K +的固有特性引起的慢反应动力学的挑战。我们在此表明​​,通过构造有序的介孔结构在MoS 2中创建足够的暴露边缘,极大地有利于改善动力学以及增加钾存储的反应位。具有边缘富集平面的工程MoS 2(EE-MoS 2)具有三维双连续框架的特征,该框架具有约5.0 nm的有序介孔和约9.0 nm的薄壁。重要的是,EE-MoS 2允许在孔壁处暴露出巨大的边缘平面,从而使其内在层间距更易被K +吸收,并加速了转化动力学,从而实现了增强的容量和高倍率容量。令人印象深刻的是,EE-MoS 2在0.05 A·g -1时显示出506 mAh·g -1的高可逆充电容量,在200次循环后在1.0 A·g -1时显示出优异的循环容量321 mAh·g -1在2.0 A·g -1下达到250 mAh·g -1的性能,优于边缘缺陷MoS 2具有无孔的散装结构。这项工作启发了具有丰富边缘的纳米结构设计,以改善电化学性能,并为探索高性能PIB提供了范例。

更新日期:2020-07-17
down
wechat
bug