The low thermal conductivity and the absence of effective acceptors limit the potential utility of β -Ga 2 O 3 electronics. Herein, to generate an n-channel β -Ga 2 O 3 heterojunction field-effect transistor (FET) with efficient thermal management, n-type β -Ga 2 O 3 as a channel layer was integrated with p-type 4H-SiC as both a gate and a thermal drain via van der Waals interaction. The n-p β -Ga 2 O 3 /4H-SiC heterojunction displayed typical rectifying behavior with an ideality factor of 1.4 and a rectification ratio of ∼10 7 . The fabricated β -Ga 2 O 3 heterojunction FET operated in depletion mode with current saturation above the pinch-off voltage, which is consistent with the results of numerical device simulation. Excellent output and transfer characteristics were observed, including no hysteresis, low subthreshold swing (∼114 mV dec −1<...

中文翻译：

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使用p型4H-SiC栅极的超宽带隙β-Ga 2 O 3异质结场效应晶体管，实现高效热管理

低热导率和有效受体的缺乏限制了β-Ga 2 O 3电子器件的潜在用途。这里，为了产生具有有效热管理的n沟道β-Ga2 O 3异质结场效应晶体管（FET），将n型β-Ga2 O 3作为沟道层与p型4H-SiC集成为一体。通过范德华相互作用实现浇口和散热。npβ-Ga 2 O 3 / 4H-SiC异质结表现出典型的整流行为，理想系数为1.4，整流比约为10 7。制作的β-Ga 2 O 3异质结FET以耗尽模式工作，电流饱和高于夹断电压，这与数值器件仿真的结果一致。观察到了极好的输出和传输特性，包括没有磁滞，低亚阈值摆幅（〜114 mV dec -1 <。