Phosphorene is one of the most promising elemental 2D materials. So far, mechanical exfoliation is the main route toward the formation of phosphorene sheets. Although field‐effect transistors are realized on phosphorene, their arrangement and size are dictated by the randomness of the exfoliation and transfer methods. Here, the evolution of highly crystalline and large‐area phosphorene sheets with a laser‐assisted phase transition from red phosphorus directly on silicon substrates in desired locations is reported. The original red phosphorus can be patterned prior to laser‐assisted crystallization to achieve the desired shape, location, and layer thickness (either mono or few). A 1064 nm laser is employed as the source to impart energy onto the red phosphorus layer and to achieve allotrope transformation. A combination of argon–oxygen (Ar:O₂) and helium–hydrogen (He:H₂) gases is exploited in a sequential manner to lead to phosphorene sheets. Various techniques are used to examine the physical properties of phosphorene sheets. Field‐effect transistors are made at different phases of crystallization and a high field‐effect mobility of 1450 cm² V⁻¹ s⁻¹ and on/off ratio of 10³ are achieved. Moreover, the optoelectrical characteristics of the phosphorene‐based phototransistors under different illumination powers and back‐gate voltages are investigated, showing superior performance.

中文翻译：

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在硅基板上使用新颖的无剥落直接结晶技术的高性能磷基晶体管

磷是最有前途的2D元素材料之一。迄今为止，机械剥离是形成磷片的主要途径。尽管场效应晶体管是在磷光体上实现的，但其排列和大小却取决于剥落和转移方法的随机性。在此，据报道，高结晶度和大面积磷化片的演化具有激光辅助的相变，该相变由红磷直接在所需位置的硅衬底上直接形成。可以在激光辅助结晶之前对原始的红磷进行构图，以实现所需的形状，位置和层厚度（单层或很少）。使用1064 nm激光作为源，将能量传递到红磷层上并实现同素异形体转变。氩氧混合气（Ar：O₂）和氦-氢（He：H ₂）气体以顺序的方式被利用来形成磷片。使用各种技术来检查磷片的物理性质。场效应晶体管在结晶的不同阶段制成，可实现1450 cm ² V ^-1 s ^-1的高场效应迁移率和10 ^3的开/关比。此外，研究了基于磷光的光电晶体管在不同照明功率和背栅电压下的光电特性，显示了优越的性能。