Diluted magnetic semiconductors based on group‐IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn‐doped SiGe thin films are first fabricated on Ge substrates by radio frequency magnetron sputtering and then crystallized by rapid thermal annealing (RTA). After the RTA, the samples become ferromagnetic semiconductors, in which the Curie temperature increases with increasing Mn doping concentration and reaches 280 K with 5% Mn concentration. The data suggest that the ferromagnetism comes from the hole‐mediated process and is enhanced by the tensile strain in the SiGe crystals. Meanwhile, the Hall effect measurement up to 33 T to eliminate the influence of anomalous Hall effect reveals that the hole mobility of the annealed samples is greatly enhanced and the maximal value is ≈1000 cm² V⁻¹ s⁻¹, owing to the tensile strain‐induced band structure modulation. The Mn‐doped SiGe thin films with high Curie temperature ferromagnetism and high hole mobility may provide a promising platform for semiconductor spintronics.

中文翻译：

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拉伸应变Mn掺杂SiGe薄膜的高居里温度铁磁性和高空穴迁移率

对于与当前硅技术兼容的自旋电子器件，需要使用基于IV组材料的稀磁半导体。在这项工作中，首先通过射频磁控溅射在Ge衬底上制造非晶质掺杂Mn的SiGe薄膜，然后通过快速热退火（RTA）使其结晶。在RTA之后，样品变成铁磁半导体，其中居里温度随着Mn掺杂浓度的增加而升高，并在5％的Mn浓度下达到280K。数据表明，铁磁性来自空穴介导的过程，并通过SiGe晶体中的拉伸应变而增强。与此同时，² V ^-1 s ^-1，归因于拉伸应变引起的能带结构调制。具有高居里温度铁磁性和高空穴迁移率的Mn掺杂SiGe薄膜可能为半导体自旋电子学提供有希望的平台。