Abstract Under unclamped inductive switching (UIS) condition, the distribution of avalanche breakdown current in insulated gate bipolar transistor (IGBT) is non-uniform. Many previous studies have shown the results of calculating current distribution and behavior using a device simulator. As a result of experimental observation, there are some reports that the temperature change of the device was observed by using infrared thermography. However, previous observational experiments had been conducted in only a few microseconds of time resolution. In order to understand the behavior of current concentration (filament) related to the breakdown of IGBTs, a method with a sub-microsecond time resolution and high sensitivity that can be observed even under single avalanche breakdown condition is required. In this study, we observed the photoemission associated with the avalanche breakdown current in IGBTs using a multi-anode photomultiplier tube (PMT) with a high temporal resolution of 20 ns. Since PMT can detect extremely weak light, it is possible to observe photoemission even under a single pulse bias condition. The increase and decrease and the movement of the light emitted from the current filament were observed. It was found that it changed every time the pulse was applied.

中文翻译：

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绝缘栅双极晶体管雪崩击穿光发射的单脉冲观测

摘要 在非钳位感应开关（UIS）条件下，绝缘栅双极晶体管（IGBT）雪崩击穿电流分布不均匀。许多先前的研究已经显示了使用设备模拟器计算电流分布和行为的结果。作为实验观察的结果，有报道称使用红外热像仪观察器件的温度变化。然而，之前的观测实验仅在几微秒的时间分辨率内进行。为了了解与 IGBT 击穿相关的电流浓度（灯丝）行为，需要一种具有亚微秒时间分辨率和高灵敏度的方法，即使在单个雪崩击穿条件下也可以观察到。在这项研究中，我们使用具有 20 ns 高时间分辨率的多阳极光电倍增管 (PMT) 观察到与 IGBT 中的雪崩击穿电流相关的光电发射。由于 PMT 可以检测极微弱的光，因此即使在单脉冲偏置条件下也可以观察到光发射。观察电流灯丝发出的光的增减和运动。发现每次施加脉冲时它都会改变。