An ultra-thin Co 2 MnSi(0.5 nm)/MnGa(1.5 nm) bilayer capped with Pt (5 nm) has been successfully grown by molecular-beam epitaxy. It is a potential candidate of synthetic antiferromagnets due to antiferromagnetic coupling between Co 2 MnSi and MnGa, which is a promising skyrmion-racetrack-memory medium without skyrmion Hall effect after capping with a Pt layer. Unusual humps in transverse Hall resistance loops are clearly observed in the temperature range from 260 to 400 K. This anomaly is generally attributed to topological Hall effect, but other than that, we prove that non-uniform rotation of magnetic moments in the bilayer with magnetic field sweeping is also a possible mechanism contributed to the unusual hump.

中文翻译：

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Co 2 MnSi / MnGa / Pt三层膜中异常的霍尔效应

通过分子束外延成功地生长了覆盖有Pt（5 nm）的超薄Co 2 MnSi（0.5 nm）/ MnGa（1.5 nm）双层。由于Co 2 MnSi和MnGa之间的反铁磁耦合，它是合成反铁磁体的潜在候选者，这是一种有希望的Skyrmion-racetrack记忆介质，在覆盖Pt层后没有Skyrmion霍尔效应。在260至400 K的温度范围内，可以清楚地观察到横向霍尔电阻环路中的异常驼峰。这种异常通常归因于拓扑霍尔效应，但除此之外，我们证明了具有磁性的双层中磁矩的非均匀旋转扫地也是造成异常驼峰的一种可能机制。