The expedient way for the development of microelectromechanical systems (MEMS) based devices are based on two key steps. First, perform the simulation for the optimization of various parameters by using different simulation tools that lead to cost reduction. Second, develop the devices with accurate fabrication steps using optimized parameters. Here, authors have performed a piezoelectric analysis of an array of zinc oxide (ZnO) nanostructures that have been created on both sides of aluminum sheets. Various quantities like swerve, stress, strain, electric flux, energy distribution, and electric potential have been studied during the piezo analysis. Then actual controlled growth of ZnO nanorods (NRs) arrays was done on both sides of the etched aluminum rod at low-temperature using the chemical bath deposition (CBD) method for the development of a MEMS energy harvester. Micro creaks on the substrate acted as an alternative to the seed layer. The testing was performed by applying ambient range force on the nanostructure. It was found that the voltage range on topside was 0.59 to 0.62 mV, and the bottom side was 0.52 to 0.55 mV. These kinds of devices are useful in low power micro-devices, nanoelectromechanical systems, and smart wearable systems.

中文翻译：

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纳米能量收集器的建模和压电分析。

基于微机电系统（MEMS）的设备开发的权宜之计是基于两个关键步骤。首先，使用不同的仿真工具进行仿真以优化各种参数，从而降低成本。其次，使用优化的参数以精确的制造步骤开发器件。在这里，作者对在铝片两面形成的氧化锌（ZnO）纳米结构阵列进行了压电分析。在压电分析过程中，已经研究了诸如弯曲，应力，应变，通量，能量分布和电势等各种量。然后，使用化学浴沉积（CBD）方法在低温下在蚀刻铝棒的两侧进行ZnO纳米棒（NRs）阵列的实际受控生长，以开发MEMS能量收集器。基材上的细微裂缝可作为种子层的替代品。通过在纳米结构上施加环境范围力来进行测试。发现顶侧的电压范围为0.59至0.62mV，底侧的电压范围为0.52至0.55mV。这些类型的设备可用于低功率微设备，纳米机电系统和智能可穿戴系统。底侧为0.52至0.55mV。这些类型的设备可用于低功率微设备，纳米机电系统和智能可穿戴系统。底侧为0.52至0.55mV。这些类型的设备可用于低功率微设备，纳米机电系统和智能可穿戴系统。