This paper presents a new wideband inductorless CMOS transimpedance amplifier (TIA) for 10Gb/s applications. In this proposed TIA, inverter‐based common‐drain active feedback topology is modified by introducing a cascode transistor to reduce input impedance. Furthermore, capacitive degeneration and negative capacitance techniques are employed by using a single capacitor. Both techniques extend the bandwidth. Mathematical analysis of the proposed TIA has been done using the small signal model to describe bandwidth extension. To verify the theoretical description, the proposed TIA is simulated using TSMC 0.18 μm CMOS technology at 1.8 V power supply with 4.3 mW power consumption. The input photodiode capacitance is 0.25 pF. Simulation results show the transimpedance gain of 51.4 dBΩ and 7.6 GHz bandwidth. The input noise current spectral density is 27 pA/√Hz.

中文翻译：

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利用电容负反馈和负电容的宽带无电感跨阻放大器

本文提出了一种适用于10Gb / s应用的新型宽带无电感CMOS跨阻放大器（TIA）。在此拟议的TIA中，通过引入共源共栅晶体管以降低输入阻抗，对基于逆变器的共漏有源反馈拓扑进行了修改。此外，通过使用单个电容器来采用电容性退化和负电容技术。两种技术都扩展了带宽。使用小信号模型来描述带宽扩展已完成了对建议的TIA的数学分析。为了验证理论描述，本文采用TSMC 0.18μmCMOS技术在1.8 V电源和4.3 mW功耗下对所建议的TIA进行了仿真。输入光电二极管电容为0.25 pF。仿真结果表明，跨阻增益为51.4dBΩ，带宽为7.6 GHz。