High‐mobility, high‐stability InGaZnO (IGZO) thin‐film transistors (TFTs) were fabricated with the aid of phenyltriethoxysilane (PTES) self‐assembled monolayers (SAMs) instead of traditional passivation layer. The effect of PTES on the performance IGZO‐TFTs was investigated, systematically. Compared to the IGZO‐TFTs without PTES modification, PTES‐treated IGZO‐TFTs exhibited higher mobility and smaller hysteresis of transfer curves, owing to less adsorption/desorption effect on the IGZO surface and mild self‐assembly process. Meanwhile, IGZO‐TFTs modified with PTES SAMs exhibited a more excellent electrical stability with a threshold voltage shift (ΔV_th) of only 0.17 V than the unmodified one with a ΔV_th of 5.38 V, which was attributed to the formation of hydrophobic PTES SAMs on the IGZO surface and the well‐ordered interface between PTES and back channel surface. © 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

中文翻译：

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苯基三乙氧基硅烷自组装单层作为InGaZnO薄膜晶体管的改性层的见解

高迁移率，高稳定性的InGaZnO（IGZO）薄膜晶体管（TFT）借助苯基三乙氧基硅烷（PTES）自组装单层（SAM）代替了传统的钝化层而制造。系统地研究了PTES对IGZO-TFT性能的影响。与未进行PTES修饰的IGZO-TFT相比，经过PTES处理的IGZO-TFT表现出更高的迁移率和较小的传递曲线滞后性，这是由于对IGZO表面的吸附/解吸作用较小以及自组装过程温和。同时，随着PTES的SAM改性IGZO-TFT的表现出与一阈值电压偏移（Δ更优异的电稳定性V_个仅0.17的V）比未修饰的一个用Δ V_个之所以达到5.38 V，是因为IGZO表面上形成了疏水性PTES SAM，并且PTES与反向通道表面之间的界面井井有条。©2020日本电气工程师学会。由Wiley Periodicals LLC发布。