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High‐Performance Static Induction Transistors Based on Small‐Molecule Organic Semiconductors
Advanced Materials Technologies ( IF 6.8 ) Pub Date : 2020-07-15 , DOI: 10.1002/admt.202000361
Erjuan Guo 1 , Shen Xing 1 , Felix Dollinger 1 , Zhongbin Wu 1 , Alexander Tahn 2 , Markus Löffler 2 , Karl Leo 1 , Hans Kleemann 1
Affiliation  

The polymeric organic‐static‐induction transistor (OSIT), a solid‐state vacuum triode, has been extensively studied as a promising vertical organic thin‐film transistor. By utilizing polymers as organic semiconductors in OSITs, important performance figures have been achieved, for example, a maximum on‐current output of about 10 mA cm−2, on/off current ratio as high as 105, and a large current gain of 1000. However, even though polymers with higher mobility have been developed, the performance of OSITs has not been significantly improved yet. In this work, record‐high performance OSITs with small‐molecule materials as organic semiconductors are demonstrated. Pentacene as a hole‐transport material for p‐type OSITs can be easily deposited into pinholes of the gate electrode, hence creating effective conducting channels. Excellent characteristics, such as a high on‐current greater than 260 mA cm−2, on/off current ratio up to 3.3 × 105, and a large transmission factor of 99.98% as well as high current gain of 7965, are attained. These results make the small‐molecule organic semiconductor a candidate material for vertical OSITs as well as for organic electronics.

中文翻译:

基于小分子有机半导体的高性能静电感应晶体管

高分子有机静电感应晶体管(OSIT)是一种固态真空三极管,已被广泛研究为有前途的垂直有机薄膜晶体管。通过将聚合物用作OSIT中的有机半导体,已经获得了重要的性能指标,例如,最大导通电流输出约为10 mA cm -2,导通/关断电流比高达10 5,并获得了1000的大电流增益。但是,尽管已开发出具有更高迁移率的聚合物,但OSIT的性能尚未得到显着改善。在这项工作中,展示了使用小分子材料作为有机半导体的创纪录的高性能OSIT。并五苯作为p型OSIT的空穴传输材料,可以很容易地沉积到栅电极的针孔中,从而形成有效的导电通道。出色的特性,例如大于260 mA cm -2的高导通电流,开/关电流比高达3.3×10 5,实现了99.98%的大传输因子以及7965的高电流增益。这些结果使小分子有机半导体成为垂直OSIT和有机电子产品的候选材料。
更新日期:2020-09-10
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