Carbon nanotube field-effect transistors (CNTFETs) and their growing applications are becoming part of modern nanoelectronics, which is in urgent need for high-performance ultrascaled transistors. Sub-10-nm junctionless ballistic carbon nanotube field-effect transistors (JL-CNTFET) with substantial improved performance are computationally proposed herein. The non-equilibrium Green's function (NEGF) simulation is used for the computational assessment. The proposed simple improvement technique is based on the use of high n-type doping concentration at the level of carbon nanotube underneath the gate while keeping the junctionless paradigm that facilitates tremendously the fabrication processes of ultrascaled FETs. It has been found that the proposed doping profile can significantly mitigate several ultrascaling effects while boosting the performance of sub-10-nm JL-CNTFETs. The recorded enhancements include the leakage current, current ratio, subthreshold swing, switching speed, switching energy, drain-induced barrier lowering, and threshold voltage roll-off. The significant improvements obtained in this work for sub-10-nm JL-CNTFETs, make the proposed strategy, which is simple, feasible, and efficient, as a promising technique for improving ultrascaled FETs endowed with other gate geometries and channel nanomaterials while paving the way towards high-performance sub-5-nm FETs.

碳纳米管场效应晶体管（CNTFET）及其不断增长的应用正在成为现代纳米电子学的一部分，而现代纳米电子学迫切需要高性能超大规模晶体管。本文在计算上提出了具有实质性改进性能的低于10nm的无结弹道碳纳米管场效应晶体管（JL-CNTFET）。非平衡格林函数（NEGF）模拟用于计算评估。所提出的简单改进技术基于在栅极下方碳纳米管水平使用高n型掺杂浓度，同时保持无结范例，这极大地促进了超大规模FET的制造工艺。已经发现，所提出的掺杂分布可以显着减轻几种超尺度效应，同时提高亚10纳米JL-CNTFET的性能。记录的增强包括泄漏电流，电流比，亚阈值摆幅，开关速度，开关能量，漏极引起的势垒降低和阈值电压降落。在这项工作中，对于低于10纳米的JL-CNTFET进行的重大改进，使所提出的策略简单，可行，高效，成为一种有希望的技术，可改善具有其他栅极几何形状和沟道纳米材料的超规模FET，同时铺平道路。高性能亚5纳米FET的方法。漏极引起的势垒降低，阈值电压下降。在这项工作中，对于低于10纳米的JL-CNTFET进行的重大改进，使所提出的策略简单，可行，高效，成为一种有希望的技术，可改善具有其他栅极几何形状和沟道纳米材料的超规模FET，同时铺平道路。高性能亚5纳米FET的方法。漏极引起的势垒降低，阈值电压下降。在这项工作中，对于低于10纳米的JL-CNTFET进行的重大改进，使所提出的策略简单，可行，高效，成为一种有希望的技术，可改善具有其他栅极几何形状和沟道纳米材料的超规模FET，同时铺平道路。高性能亚5纳米FET的方法。