Mn (5%) doped BiFeO₃ (MBFO) thin films were epitaxially grown on La_2/3Sr_1/3MnO₃/LaAlO₃ substrates via pulsed laser deposition. The MBFO thin film was confirmed to be an epitaxial thin film having a (001) orientation crystal structure by X-ray diffraction experiments. Compared to the BiFeO₃ (BFO) thin film, the MBFO thin films have a shrunk a-axis lattice constant and a significantly elongated c-axis lattice constant, showing a c/a ratio of 1.15, and exhibiting high tetragonal strain. Due to the high tetragonal strain, the MBFO thin film exhibited higher polarization, magnetization, and d₃₃ values than the BiFeO₃ (BFO) thin film, resulting in enhanced multiferroic properties. From the results of the study on the relationship between the ferroelectric domain structure and the thickness observed by piezoresponse force microscope, it was confirmed that the domain wall energies of the MBFO thin films were larger than those of the BFO thin films. In addition, the I-V curves (photovoltaic current) showed that the MBFO thin films had the open-circuit voltages and photovoltaic currents higher than that of the BFO thin films due to its higher ferroelectric polarization and smaller band gap than those of the BFO thin films.

通过脉冲激光沉积在La _2/3 Sr _1/3 MnO ₃ / LaAlO ₃衬底上外延生长Mn（5％）掺杂的BiFeO ₃（MBFO）薄膜。通过X射线衍射实验确认MBFO薄膜是具有（001）取向晶体结构的外延薄膜。与BiFeO ₃（BFO）薄膜相比，MBFO薄膜具有收缩的a轴晶格常数和显着延长的c轴晶格常数，显示c / a比为1.15，并表现出高的四方应变。由于高四方应变，MBFO薄膜的极化，磁化强度和d ₃₃值均高于BiFeO _3。（BFO）薄膜，从而增强了多铁性。从压电响应力显微镜观察到的铁电畴结构和厚度之间的关系的研究结果，证实了MBFO薄膜的畴壁能大于BFO薄膜的畴壁能。此外，IV曲线（光伏电流）表明MBFO薄膜具有比BFO薄膜更高的开路电压和光伏电流，这是因为其铁电极化强度更高，带隙比BFO薄膜更小。