It is necessary to study fault tolerant techniques for nanotechnology since nanometer devices are very sensitive to system and environment influences. In this paper, we present a novel fault tolerant technique for nanocomputers, namely, XOR multiplexing based on redundancy-modified NAND gates. The error distributions and fault tolerant ability of the proposed architecture are analyzed and compared them with von Neumann’s multiplexing. Experimental results show that compared with conventional multiplexing technique based on NAND gate, the new system has a much higher fault tolerant ability. According to the evaluation, by using multiple redundant components, the device error tolerant ability of the proposed architecture can up to the 10⁻¹. In unreliable nanometer-scale devices-based systems, this architecture is potentially effective against the increasing transient errors.

由于纳米器件对系统和环境的影响非常敏感，因此有必要研究纳米技术的容错技术。在本文中，我们提出了一种用于纳米计算机的新颖的容错技术，即基于冗余修改后的NAND门的XOR复用。分析了所提出体系结构的错误分布和容错能力，并将其与冯·诺依曼复用技术进行了比较。实验结果表明，与传统的基于“与非”门的复用技术相比，新系统具有更高的容错能力。根据评估，通过使用多个冗余组件，所提出体系结构的设备容错能力可以达到10 ^-1。在不可靠的基于纳米级设备的系统中，该体系结构可能有效地抵抗不断增加的瞬态误差。