The correlation between the crystal structure and valence band structure of a (Ga_xIn_1–x)₂O₃ solid solution system was investigated by using combinatorial synthesis. At a low Ga content of (Ga_xIn_1–x)₂O₃ with a single-phase cubic In₂O₃ crystal structure, a surface electron accumulation layer (SEAL), which is an important electrical phenomenon in In₂O₃, was confirmed. When the Ga content increased to approximately x = 0.4, mixed crystal structures of Ga₂O₃ and In₂O₃ were produced. Above x = 0.5, the dominant valence band structure was attributed to Ga₂O₃, the SEAL disappeared, and the sheet resistance increased greatly by 5 orders of magnitude or more. The in-gap state and valence band structure of the (Ga_xIn_1–x)₂O₃ solid solution system were strongly affected by Ga₂O₃; however, the valence band maximum position shifted to a higher binding energy.

中文翻译：

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通过组合合成制造的 (GaxIn1-x)2O3 固溶体系统的价带改性。

通过使用组合合成研究了(Ga _x In _{1– x} ) ₂ O ₃固溶体系统的晶体结构和价带结构之间的相关性。在具有单相立方 In ₂ O ₃晶体结构的 (Ga _x In _{1– x} ) ₂ O ₃低 Ga 含量下，表面电子积累层 (SEAL)，这是 In ₂ O _{3 中}的重要电现象， 已经被证实。当 Ga 含量增加到x = 0.4 左右时，Ga ₂ O 的混晶结构_{产生了 3}和 In ₂ O ₃。x = 0.5以上时，主要的价带结构归因于 Ga ₂ O ₃，SEAL 消失，薄层电阻大大增加了 5 个数量级或更多。(Ga _x In _{1– x} ) ₂ O ₃固溶体系统的带隙态和价带结构受Ga ₂ O _{3 的}影响很大；然而，价带最大位置转移到更高的结合能。